{"title":"In(Ga) as基异质结构的物理学","authors":"G. Bastard, R. Ferreira","doi":"10.1364/qwoe.1989.ma4","DOIUrl":null,"url":null,"abstract":"The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physics of In(Ga)As-Based Heterostructures\",\"authors\":\"G. Bastard, R. Ferreira\",\"doi\":\"10.1364/qwoe.1989.ma4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).\",\"PeriodicalId\":205579,\"journal\":{\"name\":\"Quantum Wells for Optics and Optoelectronics\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Wells for Optics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/qwoe.1989.ma4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.ma4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The In(Ga)As-based heterostructures appear promizing for the implementation of monolithic opto-electronic devices operating in the 1.5 μm wavelength. In (Ga)As-InP and In(Ga)As-In(Al)As are the two main families which are lattice-matched to InP substrates and which can be fabricated by Molecular Beam Epitaxy or Metal-Organic-Chemical-Vapor Deposition. These growth techniques allow the formation of abrupt interfaces which separate the well-acting (Ga(In)As) from the barrier-acting materials (InP or Al(In)As).
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