{"title":"更快,更准确的故障分析:电路编辑和短定位执行在相同的倾斜角使用多种技术","authors":"William Courbat, J. Jatzkowski","doi":"10.31399/asm.edfa.2019-4.p022","DOIUrl":null,"url":null,"abstract":"\n A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques\",\"authors\":\"William Courbat, J. Jatzkowski\",\"doi\":\"10.31399/asm.edfa.2019-4.p022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.\",\"PeriodicalId\":431761,\"journal\":{\"name\":\"EDFA Technical Articles\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"EDFA Technical Articles\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.edfa.2019-4.p022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2019-4.p022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Faster and More Accurate Failure Analysis: Circuit Editing and Short Localization Performed at Same Tilt Angle using Multiple Techniques
A recent trend in semiconductor failure analysis involves combining the use of different tools and techniques in order to acquire more accurate data at a faster rate. This article describes a new workflow that combines FIB, GIS, and nanoprobing, all performed at the same FIB tilt position. It also provides two examples in which the workflow is used.