用CuII(双酮亚胺酸酯)2和H2原子层沉积铜薄膜

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090379

Byeol Han, K. Park, Kwangchol Park, J. Park, Won-Jun Lee

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引用次数: 2

摘要

本文首次报道了交替暴露于CuII(双酮亚胺酸盐)2和H2的Cu薄膜的原子层沉积(ALD)。在140 ~ 220℃范围内研究了沉积温度对沉积膜性能的影响。在180 ~ 200℃的温度下，在Pt衬底上获得了最小的片电阻和连续的薄膜表面。17 nm厚ALD Cu膜的电阻率为~ 7µΩ·cm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Atomic layer deposition of copper thin film using CuII(diketoiminate)2 and H2

We report for the first time the atomic layer deposition (ALD) of Cu film using alternating exposures to Cu^II(diketoiminate)2 and H2. The influences of deposition temperature on the properties of the deposited film were investigated at 140–220°C. Minimum sheet resistance and continuous film surface on Pt substrate were obtained at 180–200°C. The resistivity of 17-nm-thick ALD Cu film was ∼7 µΩ·cm.

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2009 IEEE International Interconnect Technology Conference

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