{"title":"一种2.4 ghz 24dbm SOI CMOS功率放大器，具有片上可调谐匹配网络，可提高回退效率","authors":"F. Carrara, C. Presti, G. Palmisano","doi":"10.1109/ESSCIRC.2009.5325995","DOIUrl":null,"url":null,"abstract":"In this work, the potential of load adaptation for enhanced back-off efficiency in RF power amplifiers (PAs) is investigated through a 0.13-µm silicon-on-insulator (SOI) CMOS fabrication technology. To this aim, the first CMOS PA with fully integrated reconfigurable output matching network is presented. The PA delivers a 24-dBm maximum output power while operating at 2.4 GHz and 2-V supply voltage. A significant efficiency improvement of up to 34% is achieved through load adaptation, peak efficiency being as high as 65%. Linear operation is also demonstrated under two-tone excitation, since a 16-dBm output power is attained while complying with a −40-dBc IM3 specification.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"201 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 2.4-GHz 24-dBm SOI CMOS power amplifier with on-chip tunable matching network for enhanced efficiency in back-off\",\"authors\":\"F. Carrara, C. Presti, G. Palmisano\",\"doi\":\"10.1109/ESSCIRC.2009.5325995\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the potential of load adaptation for enhanced back-off efficiency in RF power amplifiers (PAs) is investigated through a 0.13-µm silicon-on-insulator (SOI) CMOS fabrication technology. To this aim, the first CMOS PA with fully integrated reconfigurable output matching network is presented. The PA delivers a 24-dBm maximum output power while operating at 2.4 GHz and 2-V supply voltage. A significant efficiency improvement of up to 34% is achieved through load adaptation, peak efficiency being as high as 65%. Linear operation is also demonstrated under two-tone excitation, since a 16-dBm output power is attained while complying with a −40-dBc IM3 specification.\",\"PeriodicalId\":258889,\"journal\":{\"name\":\"2009 Proceedings of ESSCIRC\",\"volume\":\"201 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-11-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Proceedings of ESSCIRC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2009.5325995\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5325995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.4-GHz 24-dBm SOI CMOS power amplifier with on-chip tunable matching network for enhanced efficiency in back-off
In this work, the potential of load adaptation for enhanced back-off efficiency in RF power amplifiers (PAs) is investigated through a 0.13-µm silicon-on-insulator (SOI) CMOS fabrication technology. To this aim, the first CMOS PA with fully integrated reconfigurable output matching network is presented. The PA delivers a 24-dBm maximum output power while operating at 2.4 GHz and 2-V supply voltage. A significant efficiency improvement of up to 34% is achieved through load adaptation, peak efficiency being as high as 65%. Linear operation is also demonstrated under two-tone excitation, since a 16-dBm output power is attained while complying with a −40-dBc IM3 specification.
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