G. Thareja, S. Chopra, B. Adams, N. Patil, Y. Ta, P. Porshnev, Y. Kim, S. Moffatt, D. Loftis, R. Brennan, G. Goodman, I. Abdelrehim, K. Saraswat, Y. Nishi
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Ultra shallow junctions with high dopant activation and GeO2 interfacial layer for gate dielectric in germanium MOSFETs
For the first time, ultra shallow junctions (xj < 10nm) are demonstrated using Plasma Immersion Ion Implantation for both n-type and p-type dopants in Ge. High electrical activation (>1×1020 cm−3) is achieved for all dopant atoms (P/As/Sb/B) using Laser Thermal Processing. We also show ultrathin (0.6nm), high quality GeO2 interfacial layer for gate dielectric, which provides substrate orientation independent Dit and mobility enhancement for Ge high-k N/P MOSFETs.
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