采用自对准p型波纹基极的改进基极电阻控制晶闸管的最大可控电流

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) Pub Date : 1999-05-26 DOI:10.1109/ISPSD.1999.764105

D. Byeon, You-Sang Lee, Won-Oh Lee, M. Han, Yearn-Ik Choi

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引用次数: 2

摘要

我们报道了一种改进的波纹p基基-电阻控制晶闸管(CB-BRT)，采用减小宽度的n/sup +/阴极和增加长度的手指栅极，以增加MCC(最大可控电流)并有效地抑制回跳。增加MOS通道密度和抑制再生晶闸管作用显著提高了CB-BRT的MCC。实验结果表明，在斜坡关断栅极电压为-10 V、p基注入剂量为6/spl倍/10/sup 13/ cm/sup -2/的条件下，CB-BRT和常规BRT的最大可控电流分别为977 A/cm/sup 2/和687 A/cm/sup 2/。

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The maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base

We report an improved corrugated p-base base-resistance-controlled thyristor (CB-BRT) employing a reduced width n/sup +/ cathode and increased length finger gate in order to increase the MCC (maximum controllable current) and to suppress snap-back effectively. The MCC of the CB-BRT is increased considerably by the increased MOS channel density and the suppressed regenerative thyristor action. Experimental results show that the maximum controllable currents of the CB-BRT and the conventional BRT are 977 A/cm/sup 2/ and 687 A/cm/sup 2/, respectively, for a ramped turn-off gate voltage of -10 V and a p-base implantation dose of 6/spl times/10/sup 13/ cm/sup -2/.

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)

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