硅矩阵制造工艺周期中非均匀几何表面的多元建模

International Workshops and Tutorials on Electron Devices and Materials Pub Date : 2006-07-01 DOI:10.1109/SIBEDM.2006.231997

G.V. Perov, A.A. Shauerman

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引用次数: 0

摘要

建立了具有可调水平掺杂的非均匀半导体表面在热氧化过程中的一维发展模型。该模型适用于多晶硅(PC)氧化物结构。证明了非均质结构中电特性和电荷特性分析的后续三维模型扩展框架

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Multivariate Modeling of Heterogeneous Geometrical Surfaces in the Technological Cycle of Manufacturing Silicon Matrixes

A one-dimensional development model of a non-uniform semiconductor surface with adjusted horizontal type of doping is elaborated during thermal oxidation. The model is adapted to structures - polycrystalline silicon (PC) - oxide. Frameworks of the subsequent model expansion in 3D format for the analysis of electric and charging characteristics in heterogeneous structures are proved

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International Workshops and Tutorials on Electron Devices and Materials

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