用于6英寸栅极整流关断晶闸管的新型紧凑型高dI/dt栅极驱动单元

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239984

H. Gruening, K. Koyanagi

{"title":"用于6英寸栅极整流关断晶闸管的新型紧凑型高dI/dt栅极驱动单元","authors":"H. Gruening, K. Koyanagi","doi":"10.1109/WCT.2004.239984","DOIUrl":null,"url":null,"abstract":"A gate driver applying a ring of ceramic chip capacitors and MOSFETs around a GCT is presented, achieving unprecedented circular homogeneity of gate turn-off current and gate dI/dt-capability (>35kA//spl mu/s). A fast charger is added to reset the capacitor's voltage within less than 150 /spl mu/s after every GCT turn-off process. The turn-off current capability of 6 kV 6-inch asymmetric GCTs and 6 kV 6-inch reverse conducting GCTs is investigated with the new gate driver and compared to that achieved under traditional gate drive. Turnoff current capability improvement by x is observed with the new gate driver, wherein 18%","PeriodicalId":303825,"journal":{"name":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A new compact high dI/dt gate drive unit for 6-inch GCTs [gate commutated turn-off thyristor]\",\"authors\":\"H. Gruening, K. Koyanagi\",\"doi\":\"10.1109/WCT.2004.239984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A gate driver applying a ring of ceramic chip capacitors and MOSFETs around a GCT is presented, achieving unprecedented circular homogeneity of gate turn-off current and gate dI/dt-capability (>35kA//spl mu/s). A fast charger is added to reset the capacitor's voltage within less than 150 /spl mu/s after every GCT turn-off process. The turn-off current capability of 6 kV 6-inch asymmetric GCTs and 6 kV 6-inch reverse conducting GCTs is investigated with the new gate driver and compared to that achieved under traditional gate drive. Turnoff current capability improvement by x is observed with the new gate driver, wherein 18%\",\"PeriodicalId\":303825,\"journal\":{\"name\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WCT.2004.239984\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCT.2004.239984","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

提出了一种栅极驱动器，在GCT周围应用一圈陶瓷片电容器和mosfet，实现了前所未有的栅极关断电流和栅极dI/dt能力的圆形均匀性(>35kA//spl mu/s)。每次GCT关断后，增加一个快速充电器，在小于150 /spl mu/s的范围内重置电容器电压。研究了6 kV 6英寸非对称gct和6 kV 6英寸反导gct在新型栅极驱动下的关断电流能力，并与传统栅极驱动下的关断电流进行了比较。新的栅极驱动器的关断电流能力提高了x，其中18%

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A new compact high dI/dt gate drive unit for 6-inch GCTs [gate commutated turn-off thyristor]

A gate driver applying a ring of ceramic chip capacitors and MOSFETs around a GCT is presented, achieving unprecedented circular homogeneity of gate turn-off current and gate dI/dt-capability (>35kA//spl mu/s). A fast charger is added to reset the capacitor's voltage within less than 150 /spl mu/s after every GCT turn-off process. The turn-off current capability of 6 kV 6-inch asymmetric GCTs and 6 kV 6-inch reverse conducting GCTs is investigated with the new gate driver and compared to that achieved under traditional gate drive. Turnoff current capability improvement by x is observed with the new gate driver, wherein 18%

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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