采用32纳米CMOS技术实现独立门偏置的lc振荡器

D. Ponton, P. Palestri, G. Knoblinger, M. Fulde, L. Selmi
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引用次数: 0

摘要

本文分析了一种具有独立栅极偏置的新型lc -振荡器拓扑结构的潜力和局限性。这个主题是从实验的角度来讨论的。这种新颖的拓扑结构已经在最先进的32纳米CMOS技术中实现,并被用作概念验证。从功耗和相位噪声方面对振荡器的性能进行了评价。独立门偏置有助于缓解限制传统lc振荡器性能的噪声/功率权衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
LC-Oscillator featuring independent gate biasing implemented in 32 nm CMOS technology
This paper analyzes the potentials and the limitations of a novel LC-Oscillator topology featuring independent gate biasing. The topic is addressed from an experimental perspective. The novel topology has been implemented in a state-of-the-art 32 nm CMOS technology and used as a proof-of-concept. The performance of the oscillator has been evaluated in terms of power consumption and phase-noise. The independent gate biasing helps in relaxing the noise/power trade-off that limits the performance of conventional LC-Oscillators.
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