K. Hamioud, V. Arnal, A. Farcy, V. Jousseaume, A. Zenasni, O. Gourhant, B. Icard, J. Pradelles, S. Manakli, P. Brun, G. Imbert, C. Jayet, M. Assous, S. Maitrejean, M. Vilmay, D. Galpin, C. Monget, J. Guillan, S. Chhun, E. Richard, D. Barbier, M. Haond
{"title":"演示TFHM可扩展到32 nm节点BEOL互连和可扩展到ELK k≤2.3介电材料","authors":"K. Hamioud, V. Arnal, A. Farcy, V. Jousseaume, A. Zenasni, O. Gourhant, B. Icard, J. Pradelles, S. Manakli, P. Brun, G. Imbert, C. Jayet, M. Assous, S. Maitrejean, M. Vilmay, D. Galpin, C. Monget, J. Guillan, S. Chhun, E. Richard, D. Barbier, M. Haond","doi":"10.1109/IITC.2009.5090370","DOIUrl":null,"url":null,"abstract":"A 32 nm node BEOL demonstrator using Trench First Hard Mask (TFHM) architecture is realized. The dual damascene process is performed with ELK dielectric at line and via level and with an adapted metallization in order to meet ITRS specifications. ELK k=2.3 & k=2.2 are studied in a TFHM architecture in order to prove its extendibility to ELK dielectric materials.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Demonstration of TFHM scalability to 32 nm node BEOL interconnect and extendibility to ELK k ≤ 2.3 dielectric material\",\"authors\":\"K. Hamioud, V. Arnal, A. Farcy, V. Jousseaume, A. Zenasni, O. Gourhant, B. Icard, J. Pradelles, S. Manakli, P. Brun, G. Imbert, C. Jayet, M. Assous, S. Maitrejean, M. Vilmay, D. Galpin, C. Monget, J. Guillan, S. Chhun, E. Richard, D. Barbier, M. Haond\",\"doi\":\"10.1109/IITC.2009.5090370\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 32 nm node BEOL demonstrator using Trench First Hard Mask (TFHM) architecture is realized. The dual damascene process is performed with ELK dielectric at line and via level and with an adapted metallization in order to meet ITRS specifications. ELK k=2.3 & k=2.2 are studied in a TFHM architecture in order to prove its extendibility to ELK dielectric materials.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090370\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Demonstration of TFHM scalability to 32 nm node BEOL interconnect and extendibility to ELK k ≤ 2.3 dielectric material
A 32 nm node BEOL demonstrator using Trench First Hard Mask (TFHM) architecture is realized. The dual damascene process is performed with ELK dielectric at line and via level and with an adapted metallization in order to meet ITRS specifications. ELK k=2.3 & k=2.2 are studied in a TFHM architecture in order to prove its extendibility to ELK dielectric materials.
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