高迁移率二维电子气体Al/sub x/Ga/sub 1-x/N/GaN异质结构的制备与表征

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982112

B. Shen, Y.G. Zhou, Z. Zheng, J. Liu, H.M. Zhou, Y. Qian, R. Zhang, Y. Shi, Y.D. Zheng

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引用次数: 0

摘要

采用金属-有机化学气相沉积的方法，制备了具有不同Al/sub 0.22/Ga/sub 0.78/N势垒厚度的调制掺杂Al/sub 0.22/Ga/sub 0.78/ GaN异质结构。Al/sub 0.22/Ga/sub 0.78/N层在厚度为53 nm时仍为假晶生长。在300 K和77 K时，异质界面处的二维电子气(2DEG)的迁移率远高于氮化镓薄膜中的电子。Al/sub 0.22/Ga/sub 0.78/N/GaN异质结构中2DEG迁移率的急剧下降对应于Al/sub 0.22/Ga/sub 0.78/N势垒的部分弛豫。

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Fabrication and characterization of Al/sub x/Ga/sub 1-x/N/GaN heterostructures with high mobility of two-dimensional electron gas

Modulation-doped Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructures with different Al/sub 0.22/Ga/sub 0.78/N barrier thickness were grown by means of metal-organic chemical vapor deposition. The Al/sub 0.22/Ga/sub 0.78/N layer is still pseudomorphic growth when its thickness is 53 nm. The mobility of the two dimensional electron gas (2DEG) at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 K and 77 K. The dramatic decrease of the 2DEG mobility in an Al/sub 0.22/Ga/sub 0.78/N/GaN heterostructure corresponds to the partial relaxation of the Al/sub 0.22/Ga/sub 0.78/N barrier.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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