先进硅纳米电子学用sn相关族iv合金薄膜的晶体生长

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874694

S. Zaima, O. Nakatsuka, N. Taoka, M. Kurosawa, T. Asano, T. Yamaha, W. Takeuchi

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引用次数: 0

摘要

在Ge和Si1-xGex中掺入Sn有效地改善了晶体性能和电子性能。此外，与sn相关的iv族材料为我们提供了能带工程的新功能。锡相关合金晶体生长的发展对扩大未来硅纳米电子学的应用至关重要。

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Crystal growth of Sn-related group-IV alloy thin films for advanced Si nanoelectronics

The incorporation of Sn into Ge and Si1-xGex effectively improves on the crystalline and electronic properties. Also, Sn-related group-IV materials give us new features of energy band engineering. The development of crystal growth of Sn-related alloys is essential for extending applications of future Si nanoelectronics.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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