T. Allanche, V. Goiffon, S. Rizzolo, P. Paillet, O. Duhamel, A. Chabane, C. Muller, P. Magnan, F. Corbière, S. Rolando, Raphael Clerc, Emmanuel Marin, A. Boukenter, Y. Ouerdane, S. Girard
{"title":"辐射硬化CMOS图像传感器x射线光电荷诱导散斑分析","authors":"T. Allanche, V. Goiffon, S. Rizzolo, P. Paillet, O. Duhamel, A. Chabane, C. Muller, P. Magnan, F. Corbière, S. Rolando, Raphael Clerc, Emmanuel Marin, A. Boukenter, Y. Ouerdane, S. Girard","doi":"10.1109/RADECS.2017.8696152","DOIUrl":null,"url":null,"abstract":"For the first time we collect photo-current induce by X-Ray in a CMOS Image Sensor (CIS). From measurement from on a range from 20 to 119 keV, integration time from 0.135 ms to 1.35ms and dose rate from 30 Gy/h to 30 kGy/h we highlight effects of energy, dose rate and integration time. We demonstrate that as integration time near 1 ms and a dose rate of 30 kGy/h a CIS can acquire image with only 23% of is dynamic use by photo-generated electrons.","PeriodicalId":223580,"journal":{"name":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor\",\"authors\":\"T. Allanche, V. Goiffon, S. Rizzolo, P. Paillet, O. Duhamel, A. Chabane, C. Muller, P. Magnan, F. Corbière, S. Rolando, Raphael Clerc, Emmanuel Marin, A. Boukenter, Y. Ouerdane, S. Girard\",\"doi\":\"10.1109/RADECS.2017.8696152\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time we collect photo-current induce by X-Ray in a CMOS Image Sensor (CIS). From measurement from on a range from 20 to 119 keV, integration time from 0.135 ms to 1.35ms and dose rate from 30 Gy/h to 30 kGy/h we highlight effects of energy, dose rate and integration time. We demonstrate that as integration time near 1 ms and a dose rate of 30 kGy/h a CIS can acquire image with only 23% of is dynamic use by photo-generated electrons.\",\"PeriodicalId\":223580,\"journal\":{\"name\":\"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.2017.8696152\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.2017.8696152","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of X-Ray Photo-Charge Induced Speckles in a Radiation Hardened CMOS Image Sensor
For the first time we collect photo-current induce by X-Ray in a CMOS Image Sensor (CIS). From measurement from on a range from 20 to 119 keV, integration time from 0.135 ms to 1.35ms and dose rate from 30 Gy/h to 30 kGy/h we highlight effects of energy, dose rate and integration time. We demonstrate that as integration time near 1 ms and a dose rate of 30 kGy/h a CIS can acquire image with only 23% of is dynamic use by photo-generated electrons.
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