不同超尺度技术下强臂闩锁的性能比较

Zhaochen Yin, Walter Audoglio, M. Grassi, P. Malcovati, E. Bonizzoni
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引用次数: 0

摘要

本文以强臂锁存器为例,比较了模拟电路在不同比例技术下所能达到的性能。在7纳米、16纳米FinFET技术和28纳米FDSOI技术中进行了性能分析,考虑了不同的输入信号幅度、输入共模电压水平、工艺角和温度。用于比较的电路已针对7纳米技术进行了优化,电源电压为0.9 V,时钟频率为1 GHz,并进行了缩放,保持了与其他技术相同的晶体管宽高比。通常情况下,7纳米技术的速度比16纳米技术慢,但在功率延迟产品(PDP)方面具有更好的性能。当输入共模电压高于750 mV时,16nm技术具有较低的延迟,但PDP较大。在所有情况下,28纳米技术的速度最慢,PDP最差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance Comparison of a Strong-Arm Latch in Different Ultra-Scaled Technologies
This paper compares the performance achievable in different scaled technologies by analog circuits, using a strong-arm latch as an example. The performance analysis has been carried out in a 7-nm and a 16-nm FinFET technologies, and in a 28-nm FDSOI technology, considering different input signal amplitudes, input common-mode voltage levels, process corners, and temperatures. The circuit used for the comparison has been optimized for the 7-nm technology with a supply voltage of 0.9 V and a clock frequency of 1 GHz and scaled, maintaining the same transistor aspect ratio in the other technologies. In typical cases, the 7-nm technology is slower than the 16-nm technology, but it has better performance in terms of power-delay product (PDP). The 16-nm technology features lower delay when the input common-mode voltage is higher than 750 mV, but with larger PDP. The 28-nm technology in all the cases is the slowest in speed and achieves the worst PDP.
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