{"title":"采用片上变压器的11GHz带宽的46GHz差分功率放大器","authors":"M. Motoyoshi, M. Fujishima","doi":"10.1109/RFIT.2014.6933263","DOIUrl":null,"url":null,"abstract":"The millimeter-wave differential power amplifier using on-chip transformer is proposed to achieve high saturated power. To realize the high freqency operation, cross couple capatitor MOSFET is applied. The parasitic element is reduce the performance of the circuit. In this paper on-chip transformer is used as balun and impedance-matching network. The component loss is reduced by unifying the function of two components. Moreover, the layout is optimized to reduce the parasitic element and lead line of the MOSFET. The proposed power amplifier is fablicated using 1P12M 45nm CMOS process. The 46GHz center frequency with 11GHz bandwidth with peak gain of 8.5dB per stage was achieved. The power added efficiency is 18%.","PeriodicalId":281858,"journal":{"name":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"46GHz differential power amplifier with 11GHz bandwidth using on-chip transformer\",\"authors\":\"M. Motoyoshi, M. Fujishima\",\"doi\":\"10.1109/RFIT.2014.6933263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The millimeter-wave differential power amplifier using on-chip transformer is proposed to achieve high saturated power. To realize the high freqency operation, cross couple capatitor MOSFET is applied. The parasitic element is reduce the performance of the circuit. In this paper on-chip transformer is used as balun and impedance-matching network. The component loss is reduced by unifying the function of two components. Moreover, the layout is optimized to reduce the parasitic element and lead line of the MOSFET. The proposed power amplifier is fablicated using 1P12M 45nm CMOS process. The 46GHz center frequency with 11GHz bandwidth with peak gain of 8.5dB per stage was achieved. The power added efficiency is 18%.\",\"PeriodicalId\":281858,\"journal\":{\"name\":\"2014 IEEE International Symposium on Radio-Frequency Integration Technology\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Symposium on Radio-Frequency Integration Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2014.6933263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Symposium on Radio-Frequency Integration Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2014.6933263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
46GHz differential power amplifier with 11GHz bandwidth using on-chip transformer
The millimeter-wave differential power amplifier using on-chip transformer is proposed to achieve high saturated power. To realize the high freqency operation, cross couple capatitor MOSFET is applied. The parasitic element is reduce the performance of the circuit. In this paper on-chip transformer is used as balun and impedance-matching network. The component loss is reduced by unifying the function of two components. Moreover, the layout is optimized to reduce the parasitic element and lead line of the MOSFET. The proposed power amplifier is fablicated using 1P12M 45nm CMOS process. The 46GHz center frequency with 11GHz bandwidth with peak gain of 8.5dB per stage was achieved. The power added efficiency is 18%.
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