{"title":"v型槽硅雪崩电子发射阵列的设计与研究","authors":"Dazhong Zhu","doi":"10.1109/ICSICT.1995.503323","DOIUrl":null,"url":null,"abstract":"A V-groove structure is used to fabricate a silicon avalanche cathode (SAC). This novel structure for a SAC has a planar electron emission surface topology which reduces the channel current crowding effect and the current punch-through effect. The device structure and fabrication processing are described. A simple series resistance model and an effective electron emission area model are also discussed. A 12/spl times/12 cells arrayed device of this structure is designed and fabricated. Its I-V characteristics and emission characteristics are investigated, producing a better result than that of the traditional structure SAC.","PeriodicalId":286176,"journal":{"name":"Proceedings of 4th International Conference on Solid-State and IC Technology","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and research of V-groove silicon avalanche electron emission array\",\"authors\":\"Dazhong Zhu\",\"doi\":\"10.1109/ICSICT.1995.503323\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A V-groove structure is used to fabricate a silicon avalanche cathode (SAC). This novel structure for a SAC has a planar electron emission surface topology which reduces the channel current crowding effect and the current punch-through effect. The device structure and fabrication processing are described. A simple series resistance model and an effective electron emission area model are also discussed. A 12/spl times/12 cells arrayed device of this structure is designed and fabricated. Its I-V characteristics and emission characteristics are investigated, producing a better result than that of the traditional structure SAC.\",\"PeriodicalId\":286176,\"journal\":{\"name\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 4th International Conference on Solid-State and IC Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1995.503323\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 4th International Conference on Solid-State and IC Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1995.503323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and research of V-groove silicon avalanche electron emission array
A V-groove structure is used to fabricate a silicon avalanche cathode (SAC). This novel structure for a SAC has a planar electron emission surface topology which reduces the channel current crowding effect and the current punch-through effect. The device structure and fabrication processing are described. A simple series resistance model and an effective electron emission area model are also discussed. A 12/spl times/12 cells arrayed device of this structure is designed and fabricated. Its I-V characteristics and emission characteristics are investigated, producing a better result than that of the traditional structure SAC.
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