{"title":"液晶技术作为失效分析工具","authors":"A. Goel, A. Gray","doi":"10.1109/IRPS.1980.362925","DOIUrl":null,"url":null,"abstract":"This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Liquid Crystal Technique as a Failure Analysis Tool\",\"authors\":\"A. Goel, A. Gray\",\"doi\":\"10.1109/IRPS.1980.362925\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362925\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Liquid Crystal Technique as a Failure Analysis Tool
This paper describes a method for identifying location of hot spots/shorts on MOS integrated circuits using liquid crystal technique. Several articles have been published discussing the theory and principles of this technique. This paper will concentrate on the practical aspects of the method.