一种新的CMOS l -退化级联LNA低噪声设计方法

The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings. Pub Date : 2004-12-06 DOI:10.1109/APCCAS.2004.1412747

Sung-Huang Lee, Y. Juang, Chin-Fong Chiu, H. Chiou

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引用次数: 5

摘要

在通信集成电路中，CMOS LNA的噪声优化设计非常重要，对于主要来自有源器件噪声的l -退化级联LNA，传统的噪声优化方法随着工作频率的增加而失效。在充分考虑栅极感应噪声和栅极电感损耗等噪声源的情况下，提出了一种基于增益匹配的LNA噪声优化设计方法。当栅极电感的质量因数小于20时，栅极电感是一个重要的问题

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A novel low noise design method for CMOS L-degeneration cascoded LNA

The noise optimization design of the CMOS LNA is important in a communication IC. The conventional noise optimization method for L-degeneration cascoded LNA with noise mainly from active device loses the validity as the operating frequency increasing. In this paper, we present a noise optimization with gain matching design method for LNA with fully considerations of noise sources including the induced gate noise and the loss of gate inductor. The gate inductor is an important issue when its quality factor is less than 20

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The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.

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