Y. Kersalé, N. Boubekeur, J. Hartnett, M. Tobar, N. Bazin, V. Giordano
{"title":"掺钛低温蓝宝石谐振振荡器","authors":"Y. Kersalé, N. Boubekeur, J. Hartnett, M. Tobar, N. Bazin, V. Giordano","doi":"10.1109/FREQ.2005.1573960","DOIUrl":null,"url":null,"abstract":"Residual paramagnetic impurities are present in high quality sapphire crystal. This phenomenon was exploited as paramagnetic spin compensation at liquid helium temperature to build high Q cryogenic sapphire resonator oscillators (CSRO). In this paper we present the characterization of intentionally Ti3+ and Ti4+ doped sapphire resonator oscillators. For the Ti3+ resonator we used the 12.7 GHz mode operating at 34K. This resonator exhibited a frequency stability of order 2 times 10-3 for 8s < tau < 20s with the use of a Gifford-McMahon cryocooler as a cold source. This corresponds to state-of-the-art line splitting of the order of 10 -7. A second experiment with a pulse tube cryocooler shows an improvement in the short term frequency stability. The Ti4+ resonator oscillator at 13.8 GHz exhibited a frequency stability of 7 times 10-14 at tau = 16s","PeriodicalId":108334,"journal":{"name":"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Titanium doped cryogenic sapphire resonator oscillators\",\"authors\":\"Y. Kersalé, N. Boubekeur, J. Hartnett, M. Tobar, N. Bazin, V. Giordano\",\"doi\":\"10.1109/FREQ.2005.1573960\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Residual paramagnetic impurities are present in high quality sapphire crystal. This phenomenon was exploited as paramagnetic spin compensation at liquid helium temperature to build high Q cryogenic sapphire resonator oscillators (CSRO). In this paper we present the characterization of intentionally Ti3+ and Ti4+ doped sapphire resonator oscillators. For the Ti3+ resonator we used the 12.7 GHz mode operating at 34K. This resonator exhibited a frequency stability of order 2 times 10-3 for 8s < tau < 20s with the use of a Gifford-McMahon cryocooler as a cold source. This corresponds to state-of-the-art line splitting of the order of 10 -7. A second experiment with a pulse tube cryocooler shows an improvement in the short term frequency stability. The Ti4+ resonator oscillator at 13.8 GHz exhibited a frequency stability of 7 times 10-14 at tau = 16s\",\"PeriodicalId\":108334,\"journal\":{\"name\":\"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2005.1573960\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2005 IEEE International Frequency Control Symposium and Exposition, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2005.1573960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Residual paramagnetic impurities are present in high quality sapphire crystal. This phenomenon was exploited as paramagnetic spin compensation at liquid helium temperature to build high Q cryogenic sapphire resonator oscillators (CSRO). In this paper we present the characterization of intentionally Ti3+ and Ti4+ doped sapphire resonator oscillators. For the Ti3+ resonator we used the 12.7 GHz mode operating at 34K. This resonator exhibited a frequency stability of order 2 times 10-3 for 8s < tau < 20s with the use of a Gifford-McMahon cryocooler as a cold source. This corresponds to state-of-the-art line splitting of the order of 10 -7. A second experiment with a pulse tube cryocooler shows an improvement in the short term frequency stability. The Ti4+ resonator oscillator at 13.8 GHz exhibited a frequency stability of 7 times 10-14 at tau = 16s