低功耗应用中SOI FinFET的体偏置效应:栅极长度依赖

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2014-04-28 DOI:10.1109/VLSI-TSA.2014.6839655

A. Sachid, S. Khandelwal, C. Hu

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引用次数: 5

摘要

研究了SOI finfet中体偏效应与栅极长度的关系。通过测量和模拟表明，随着栅极长度的减小，体偏效应增强。我们研究了通道掺杂和器件几何形状对体偏效应的影响。

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Body-bias effect in SOI FinFET for low-power applications: Gate length dependence

We study the gate length dependence of body-bias effect in SOI FinFETs. Using measurements and simulations we show that body-bias effect is enhanced as the gate length is decreased. We study the impact of channel doping and device geometry on body-bias effect.

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Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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