{"title":"大功率LED与硅太阳能电池组成的光电转换晶体管的研制","authors":"K. Okamoto, K. Okamoto, K. Morishita, A. Okuno","doi":"10.23919/ICEP55381.2022.9795501","DOIUrl":null,"url":null,"abstract":"The bipolar transistor was invented in 1948 by W. Shockley at Bell Laboratories in the United States. Since then, the transistor has advanced along with the progress of integrated circuit technology, leading to today's advanced information society. Surprisingly, however, the bipolar transistor itself has not shown any significant technological progress. In this paper, we introduce the recently invented \"Distar\", a revolutionary transistor consisting of only LED and Si solar cell.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of Photoelectric Conversion Transistor Consisting of High-power LED and Si Solar Cell\",\"authors\":\"K. Okamoto, K. Okamoto, K. Morishita, A. Okuno\",\"doi\":\"10.23919/ICEP55381.2022.9795501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The bipolar transistor was invented in 1948 by W. Shockley at Bell Laboratories in the United States. Since then, the transistor has advanced along with the progress of integrated circuit technology, leading to today's advanced information society. Surprisingly, however, the bipolar transistor itself has not shown any significant technological progress. In this paper, we introduce the recently invented \\\"Distar\\\", a revolutionary transistor consisting of only LED and Si solar cell.\",\"PeriodicalId\":413776,\"journal\":{\"name\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"150 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP55381.2022.9795501\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP55381.2022.9795501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of Photoelectric Conversion Transistor Consisting of High-power LED and Si Solar Cell
The bipolar transistor was invented in 1948 by W. Shockley at Bell Laboratories in the United States. Since then, the transistor has advanced along with the progress of integrated circuit technology, leading to today's advanced information society. Surprisingly, however, the bipolar transistor itself has not shown any significant technological progress. In this paper, we introduce the recently invented "Distar", a revolutionary transistor consisting of only LED and Si solar cell.
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