R. F. Neto, I. de Faria, A. Sachs, W. de Carvalho, J. R. Caumo, A.C.G. Bordeaux Rego
{"title":"用于1550nm光通信系统的DFB-DCPBH InGaAsP/InP激光器","authors":"R. F. Neto, I. de Faria, A. Sachs, W. de Carvalho, J. R. Caumo, A.C.G. Bordeaux Rego","doi":"10.1109/ITS.1990.175645","DOIUrl":null,"url":null,"abstract":"Room-temperature CW (continuous-wave) operation of distributed feedback (DFB) double channel planar buried heterostructure (DCPBH) InGaAsP, InP lasers emitting in the 1550-nm wavelength region has been achieved. Lasing characteristics and wave propagation in a five-layer DFB waveguide were analyzed to design low threshold current and stable single longitudinal/transversal mode operation. DFB-DCPBH structures with second-order corrugation were prepared by a two-step liquid-phase epitaxial growth process. A threshold current of 50 mA at 25 degrees C and stable single longitudinal mode operation over a wide range of driving current and temperature have been obtained. Linewidth was measured both in DC conditions and in modulated conditions up to 500 MHz.<<ETX>>","PeriodicalId":405932,"journal":{"name":"SBT/IEEE International Symposium on Telecommunications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DFB-DCPBH InGaAsP/InP lasers for 1550 nm optical communication systems\",\"authors\":\"R. F. Neto, I. de Faria, A. Sachs, W. de Carvalho, J. R. Caumo, A.C.G. Bordeaux Rego\",\"doi\":\"10.1109/ITS.1990.175645\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Room-temperature CW (continuous-wave) operation of distributed feedback (DFB) double channel planar buried heterostructure (DCPBH) InGaAsP, InP lasers emitting in the 1550-nm wavelength region has been achieved. Lasing characteristics and wave propagation in a five-layer DFB waveguide were analyzed to design low threshold current and stable single longitudinal/transversal mode operation. DFB-DCPBH structures with second-order corrugation were prepared by a two-step liquid-phase epitaxial growth process. A threshold current of 50 mA at 25 degrees C and stable single longitudinal mode operation over a wide range of driving current and temperature have been obtained. Linewidth was measured both in DC conditions and in modulated conditions up to 500 MHz.<<ETX>>\",\"PeriodicalId\":405932,\"journal\":{\"name\":\"SBT/IEEE International Symposium on Telecommunications\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-09-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"SBT/IEEE International Symposium on Telecommunications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITS.1990.175645\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"SBT/IEEE International Symposium on Telecommunications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITS.1990.175645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DFB-DCPBH InGaAsP/InP lasers for 1550 nm optical communication systems
Room-temperature CW (continuous-wave) operation of distributed feedback (DFB) double channel planar buried heterostructure (DCPBH) InGaAsP, InP lasers emitting in the 1550-nm wavelength region has been achieved. Lasing characteristics and wave propagation in a five-layer DFB waveguide were analyzed to design low threshold current and stable single longitudinal/transversal mode operation. DFB-DCPBH structures with second-order corrugation were prepared by a two-step liquid-phase epitaxial growth process. A threshold current of 50 mA at 25 degrees C and stable single longitudinal mode operation over a wide range of driving current and temperature have been obtained. Linewidth was measured both in DC conditions and in modulated conditions up to 500 MHz.<>