实现高长宽比在模具的离散轨道记录媒体

K. O. Aung, C. Shankaran, R. Sbiaa, E. Tan, S. Wong, S. Piramanayagam
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引用次数: 3

摘要

采用纳米压印技术制备离散磁道介质(DTM)被认为是未来硬盘驱动器(HDD)的一种潜在技术。在零阻胶母模的制造中,对窄宽分布的阻胶轨迹进行图像化是关键的第一步。本文报道了利用电子束光刻技术在聚甲基丙烯酸甲酯(PMMA)抗蚀剂上制造高纵横比离散磁道所面临的挑战。研究发现,用于成功地在纳米尺度上制做离散磁道的制造参数并不直接适用于微米尺度上的离散磁道的制做。因此,采用厚层抗蚀剂涂层、引入曝光后烘烤工艺、改变曝光参数等方法,在抗蚀剂上实现微米尺度长度的均匀尖锐离散轨迹。利用最优参数在抗蚀剂上刻制了20条𝜇m长轨道,轨道间距为70 nm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Achieving High Aspect Ratio of Track Length to Width in Molds for Discrete Track Recording Media
Discrete track media (DTM) fabricated by nanoimprint lithography (NIL) is considered as a potential technology for future hard disk drives (HDD). In the fabrication of a master mold for NIL, patterning the resist tracks with a narrow distribution in the width is the first critical step. This paper reports the challenges involved in the fabrication of high aspect ratio discrete tracks on Polymethylmethacrylate (PMMA) resist by means of electron beam lithography. It was observed that fabrication parameters applied for successful patterning of discrete tracks in nanoscale length were not directly suitable for the patterning of discrete tracks in micron scale. Hence different approaches such as thick layer resist coating, introducing of post exposure baking process, and varying of exposure parameters were used in order to achieve uniform sharp discrete tracks in micron scale length on the resist. The optimal parameters were used to pattern 20 𝜇m long tracks with 70 nm track pitch on the resist.
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