{"title":"一维半导体器件中的输运","authors":"S. Islam, F. Jain","doi":"10.1109/SOUTHC.1995.516080","DOIUrl":null,"url":null,"abstract":"A novel quantum well wire (QWW) realized in a high electron mobility transistor structure is presented. The QWW structure is incorporated in the design of one-dimensional modulation-doped field-effect transistor (1-D MODFET) and one-dimensional quantum interference transistor (1-D QUIT) structures. Transport characteristics of the AlGaAs-GaAs 1-D MODFET and 1-D QUIT are presented and compared with two-dimensional devices. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with their two-dimensional counterparts.","PeriodicalId":341055,"journal":{"name":"Proceedings of Southcon '95","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transport in one-dimensional semiconductor devices\",\"authors\":\"S. Islam, F. Jain\",\"doi\":\"10.1109/SOUTHC.1995.516080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel quantum well wire (QWW) realized in a high electron mobility transistor structure is presented. The QWW structure is incorporated in the design of one-dimensional modulation-doped field-effect transistor (1-D MODFET) and one-dimensional quantum interference transistor (1-D QUIT) structures. Transport characteristics of the AlGaAs-GaAs 1-D MODFET and 1-D QUIT are presented and compared with two-dimensional devices. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with their two-dimensional counterparts.\",\"PeriodicalId\":341055,\"journal\":{\"name\":\"Proceedings of Southcon '95\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Southcon '95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOUTHC.1995.516080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Southcon '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOUTHC.1995.516080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transport in one-dimensional semiconductor devices
A novel quantum well wire (QWW) realized in a high electron mobility transistor structure is presented. The QWW structure is incorporated in the design of one-dimensional modulation-doped field-effect transistor (1-D MODFET) and one-dimensional quantum interference transistor (1-D QUIT) structures. Transport characteristics of the AlGaAs-GaAs 1-D MODFET and 1-D QUIT are presented and compared with two-dimensional devices. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with their two-dimensional counterparts.
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