用于硅纳米线mosfet原子级结控制的外延NiSi2源极和漏极技术

2010 International Workshop on Junction Technology Extended Abstracts Pub Date : 2010-05-10 DOI:10.1109/IWJT.2010.5474984

S. Migita, Y. Morita, W. Mizubayashi, H. Ota

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引用次数: 5

摘要

采用掺杂偏析技术将外延NiSi2源极与漏极应用于硅纳米线mosfet中。外延NiSi2的生长具有自限生长行为和(111)晶面的稳定性。这些特性实现了在原子尺度上的结边布局。SNW mosfet的性能证明了外延NiSi2生长技术的优越性。

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Epitaxial NiSi2 source and drain technology for atomic-scale junction control in silicon nanowire MOSFETs

Epitaxial NiSi2 source and drain with dopant segregation technique is applied to silicon nanowire (SNW) MOSFETs. Growth of epitaxial NiSi2 is characterized by self-limiting growth behavior and stability of (111) facets. These features realize the layout of junction edges in atomic-scale. Advantage of epitaxial NiSi2 growth technique is demonstrated by performances of SNW MOSFETs.

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2010 International Workshop on Junction Technology Extended Abstracts

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