54 GHz CMOS LNAs, NF 3.6 dB,增益28.2 dB,采用变压器反馈gm升压技术

Shita Guo, Tianzuo Xi, P. Gui, Jing Zhang, W. Choi, K. O. Kenneth, Yanli Fan, Daquan Huang, R. Gu, Mark Morgan
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引用次数: 13

摘要

提出了一种新型的低噪声放大器拓扑结构,具有降噪和提高增益的特点。在单端级联码LNA中,提出了一种变压器反馈增益增强技术,以降低噪声系数,同时提高增益。两个54 GHz单端级联码LNAs,分别用变压器和在线传输进行匹配,以验证该技术。在65nm CMOS工艺中制造,基于变压器(TF-based)的LNA在53.5 GHz时的最小噪声系数(NF)为3.6 dB,在54 GHz时的最高功率增益为28.2 dB。据我们所知,该LNA在所有已发表的v波段CMOS LNA中具有最佳的噪声系数和功率增益。基于传输线(tl)的LNA在53.9 GHz时的最小噪声系数为3.8 dB,在54.2 GHz时的最高功率增益为25.4 dB。两个lna从1.1 V的电源消耗18ma。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB gain using transformer feedback Gm-boosting technique
This paper presents a novel topology of low-noise amplifier (LNA) with noise reduction and gain improvement. A transformer feedback gm-boosting technique is proposed in a single-ended cascode LNA to reduce the noise figure (NF) and improve the gain simultaneously. Two 54 GHz single-ended cascode LNAs, with transformer and transmission-line for matching, respectively, are demonstrated to verify this technique. Fabricated in a 65 nm CMOS process, the transformer-based (TF-based) LNA exhibits a minimum noise figure (NF) of 3.6 dB at 53.5 GHz and a highest power gain of 28.2 dB at 54 GHz in measurement. To our best knowledge, this LNA has the best noise figure and power gain among all the published V-band CMOS LNAs. The transmission-line-based (TL-based) LNA exhibits a minimum noise figure of 3.8 dB at 53.9 GHz and a highest power gain of 25.4 dB at 54.2 GHz in measurement. Both the LNAs consume 18 mA from a power supply of 1.1 V.
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