SiC功率肖特基二极管的非等温特性

2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion Pub Date : 2008-06-11 DOI:10.1109/SPEEDHAM.2008.4581136

J. Zarebski, J. Dąbrowski

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引用次数: 6

摘要

本文研究了考虑热效应的SiC功率肖特基二极管直流特性的建模问题。为SPICE建立了所研究器件的电热模型，并进行了实验验证。通过比较所选SiC功率肖特基二极管的测量特性和计算特性，对所建立模型的精度进行了评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Non-isothermal characteristics of SiC power Schottky diodes

In the paper the problem of modelling DC characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky diode.

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2008 International Symposium on Power Electronics, Electrical Drives, Automation and Motion

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