{"title":"肖特基二极管参数提取采用两种不同的方法","authors":"S. Aazou, E. Assaid","doi":"10.1109/ICM.2009.5418642","DOIUrl":null,"url":null,"abstract":"In the present study, we determine exact analytical expression of the current flow through a Schottky barrier diode as a function of the input voltage. The Schottky diode is modeled by an electronic circuit containing four physical parameters: a series resistance Rs, a shunt resistance Rsh, a Schottky diode reverse saturation current Is and a Schottky diode ideality factor η. Firstly, we solve the characteristic equation and determine the analytical expression of the input current I as a function of the input voltage of the Schottky diode V using the LambertW Function. Secondly, We present two different methods to extract the four physical parameters appearing in the electronic circuit. These methods are applied for two junctions: Iridium-Silicon Carbide Schottky barrier diode at 200K and Gold-Gallium Arsenide at 300K. Finally, we compare the results obtained via the two methods presented.","PeriodicalId":391668,"journal":{"name":"2009 International Conference on Microelectronics - ICM","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Schottky diode parameters extraction using two different methods\",\"authors\":\"S. Aazou, E. Assaid\",\"doi\":\"10.1109/ICM.2009.5418642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present study, we determine exact analytical expression of the current flow through a Schottky barrier diode as a function of the input voltage. The Schottky diode is modeled by an electronic circuit containing four physical parameters: a series resistance Rs, a shunt resistance Rsh, a Schottky diode reverse saturation current Is and a Schottky diode ideality factor η. Firstly, we solve the characteristic equation and determine the analytical expression of the input current I as a function of the input voltage of the Schottky diode V using the LambertW Function. Secondly, We present two different methods to extract the four physical parameters appearing in the electronic circuit. These methods are applied for two junctions: Iridium-Silicon Carbide Schottky barrier diode at 200K and Gold-Gallium Arsenide at 300K. Finally, we compare the results obtained via the two methods presented.\",\"PeriodicalId\":391668,\"journal\":{\"name\":\"2009 International Conference on Microelectronics - ICM\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Conference on Microelectronics - ICM\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2009.5418642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference on Microelectronics - ICM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2009.5418642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Schottky diode parameters extraction using two different methods
In the present study, we determine exact analytical expression of the current flow through a Schottky barrier diode as a function of the input voltage. The Schottky diode is modeled by an electronic circuit containing four physical parameters: a series resistance Rs, a shunt resistance Rsh, a Schottky diode reverse saturation current Is and a Schottky diode ideality factor η. Firstly, we solve the characteristic equation and determine the analytical expression of the input current I as a function of the input voltage of the Schottky diode V using the LambertW Function. Secondly, We present two different methods to extract the four physical parameters appearing in the electronic circuit. These methods are applied for two junctions: Iridium-Silicon Carbide Schottky barrier diode at 200K and Gold-Gallium Arsenide at 300K. Finally, we compare the results obtained via the two methods presented.
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