Fundamental analysis of resistive nano-crossbars for the use in hybrid Nano/CMOS-memory

As a possible successor for CMOS memory, hysteretic materials organized in crossbar structures are currently being investigated. Here, passive materials are of special importance as they maintain their functionality even when scaled down to the nanometer domain. With their regularity and inherent device density so-called nano-scaled crossbars seem to be very interesting for future components beyond the present scope of the ITRS-CMOS roadmap. But, due to their passive behavior they will not be capable of operating on their own without active devices that restore signal levels. This work investigates the limitations resistive hysteretic crossbars face due to their very nature and what performance CMOS read circuits will have to offer to let hybrid circuits result in a functional new technology.