Performance Analysis of Ni3GeFe2 / Fe3GeTe2 Composites as Ferromagnetic Layer in MTJ Memory Devices

The studies were performed based on various composites to improve the features of Magnetic Tunnel Junction (MTJ) memory devices. We have studied the electrical and electronic properties of Ni3GeFe2 and Fe3GeTe2. MgO-hBN-MgO is used as a composite dielectric material. The ferromagnetic material Ni3GeFe2 and Fe3GeTe2 have shown improvement in various electronic and magnetic properties that can be useful for further implementation in MTJ device. The Ni3GeFe2 and Fe3GeTe2 predicted good magneto-transport property that characterizes their ferromagnetic state. In oxide layer the direct bandgap of 1.0437eV at Gamma point is obtained. The validation of Ni3GeFe2 and Fe3GeTe2 as ferromagnetic layer is predicted as it showed 0eV bandgap. Local Density of State (LDOS) of FM and oxide layer is calculated along with it the electron transport is observed in z direction. It is found that these two ferromagnetic (FM) materials showed a high Curie temperature. The DOS and Band Structure of Fe is compared with Ni3GeFe2, Fe3GeTe2. In comparison with the DOS of Fe showed peak at the valance band i.e. 0.45eV and 0.69eV which shows instability of memory states, as in case of Ni3GeFe2 and Fe3GeTe2 (stable FM materials) the peaks were observed is conduction band. The study depicts that Ni3GeFe2 and Fe3GeTe2 are promising candidate for its implementation in MTJ memory device. As they show better edge boundaries and good stability of states.