{"title":"用高空间分辨率红外偏振镜表征未掺杂半绝缘GaAs晶圆的光弹性","authors":"M. Yamada, K. Ito, M. Fukuzawa","doi":"10.1109/SIM.1996.570934","DOIUrl":null,"url":null,"abstract":"In order to measure a small amount and spatial variation of birefringence induced by residual strains in III-V compound materials, we have developed a high-sensitivity high-spatial-resolution computer-controlled scanning infrared polariscope. Several characterization results on commercial GaAs wafers are presented to demonstrate its performance. It is found that local strain fields accompanied by crystal defects such as slip dislocations, lineages, inclusions, and voids can be observed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope\",\"authors\":\"M. Yamada, K. Ito, M. Fukuzawa\",\"doi\":\"10.1109/SIM.1996.570934\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to measure a small amount and spatial variation of birefringence induced by residual strains in III-V compound materials, we have developed a high-sensitivity high-spatial-resolution computer-controlled scanning infrared polariscope. Several characterization results on commercial GaAs wafers are presented to demonstrate its performance. It is found that local strain fields accompanied by crystal defects such as slip dislocations, lineages, inclusions, and voids can be observed.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570934\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570934","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoelastic characterization of undoped semi-insulating GaAs wafers with a high-spatial-resolution infrared polariscope
In order to measure a small amount and spatial variation of birefringence induced by residual strains in III-V compound materials, we have developed a high-sensitivity high-spatial-resolution computer-controlled scanning infrared polariscope. Several characterization results on commercial GaAs wafers are presented to demonstrate its performance. It is found that local strain fields accompanied by crystal defects such as slip dislocations, lineages, inclusions, and voids can be observed.
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