{"title":"压阻式压力传感器具有双单元配置,用于片上自补偿和抑制温度漂移","authors":"J. C. Wang, X. Xia, H. Zou, F. Song, Xinxin Li","doi":"10.1109/TRANSDUCERS.2013.6627129","DOIUrl":null,"url":null,"abstract":"With our developed MIS (Microholes Inter-etch & Sealing) micromachining process that is implemented only from the front-side of single-side polished (111) silicon wafers, a novel piezoresistive pressure sensing unit and another identically structured pressure-insensitive dummy unit are on-chip integrated compactly to eliminate unbalance factors induced temperature-drift by mutual compensation between the two units. In addition, the two units are both suspended from silicon substrate to suppress the packaging-stress. The high-performance pressure sensors are low-cost fabricated in a single (111)-wafer by repeatedly using the single-sided MIS process. The tested ultra-low TCO (temperature coefficient of offset) of 0.002%/°C·FS (-40°C to +125°C) well verifies the highly stable performance of the developed sensor structure.","PeriodicalId":202479,"journal":{"name":"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Piezoresistive pressure sensor with dual-unit configuration for on-chip self-compensation and suppression of temperature drift\",\"authors\":\"J. C. Wang, X. Xia, H. Zou, F. Song, Xinxin Li\",\"doi\":\"10.1109/TRANSDUCERS.2013.6627129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With our developed MIS (Microholes Inter-etch & Sealing) micromachining process that is implemented only from the front-side of single-side polished (111) silicon wafers, a novel piezoresistive pressure sensing unit and another identically structured pressure-insensitive dummy unit are on-chip integrated compactly to eliminate unbalance factors induced temperature-drift by mutual compensation between the two units. In addition, the two units are both suspended from silicon substrate to suppress the packaging-stress. The high-performance pressure sensors are low-cost fabricated in a single (111)-wafer by repeatedly using the single-sided MIS process. The tested ultra-low TCO (temperature coefficient of offset) of 0.002%/°C·FS (-40°C to +125°C) well verifies the highly stable performance of the developed sensor structure.\",\"PeriodicalId\":202479,\"journal\":{\"name\":\"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TRANSDUCERS.2013.6627129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2013.6627129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Piezoresistive pressure sensor with dual-unit configuration for on-chip self-compensation and suppression of temperature drift
With our developed MIS (Microholes Inter-etch & Sealing) micromachining process that is implemented only from the front-side of single-side polished (111) silicon wafers, a novel piezoresistive pressure sensing unit and another identically structured pressure-insensitive dummy unit are on-chip integrated compactly to eliminate unbalance factors induced temperature-drift by mutual compensation between the two units. In addition, the two units are both suspended from silicon substrate to suppress the packaging-stress. The high-performance pressure sensors are low-cost fabricated in a single (111)-wafer by repeatedly using the single-sided MIS process. The tested ultra-low TCO (temperature coefficient of offset) of 0.002%/°C·FS (-40°C to +125°C) well verifies the highly stable performance of the developed sensor structure.