太赫兹集成电路的现状——从元件到系统

U. Pfeiffer, R. Jain, J. Grzyb, S. Malz, P. Hillger, Pedro Rodríguez-Vázquez
{"title":"太赫兹集成电路的现状——从元件到系统","authors":"U. Pfeiffer, R. Jain, J. Grzyb, S. Malz, P. Hillger, Pedro Rodríguez-Vázquez","doi":"10.1109/BCICTS.2018.8551068","DOIUrl":null,"url":null,"abstract":"Despite its several applications, terahertz (THz) radiation has posed a particular challenge for hardware design. Several expensive and bulky laser or III-V semiconductor based solutions have been employed for THz systems. However, over the last decade, there has been a tremendous research into the design of THz integrated circuits in commercial silicon CMOS and SiGe HBT BiCMOS process technologies. Silicon based systems primarily benefit from the mixed signal integration capabilities of the technology, which enable a new set of possibilities and applications in the THz domain. In this paper, we review the current status of THz integrated circuits. We discuss trends in silicon based THz sources and receivers, as well as different THz on-chip systems that have been reported so far for different application areas.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Current Status of Terahertz Integrated Circuits - From Components to Systems\",\"authors\":\"U. Pfeiffer, R. Jain, J. Grzyb, S. Malz, P. Hillger, Pedro Rodríguez-Vázquez\",\"doi\":\"10.1109/BCICTS.2018.8551068\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Despite its several applications, terahertz (THz) radiation has posed a particular challenge for hardware design. Several expensive and bulky laser or III-V semiconductor based solutions have been employed for THz systems. However, over the last decade, there has been a tremendous research into the design of THz integrated circuits in commercial silicon CMOS and SiGe HBT BiCMOS process technologies. Silicon based systems primarily benefit from the mixed signal integration capabilities of the technology, which enable a new set of possibilities and applications in the THz domain. In this paper, we review the current status of THz integrated circuits. We discuss trends in silicon based THz sources and receivers, as well as different THz on-chip systems that have been reported so far for different application areas.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551068\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17

摘要

尽管有几种应用,太赫兹(THz)辐射对硬件设计提出了特别的挑战。太赫兹系统采用了几种昂贵且体积庞大的激光或III-V半导体解决方案。然而,在过去的十年中,在商用硅CMOS和SiGe HBT BiCMOS工艺技术中对太赫兹集成电路的设计进行了大量的研究。基于硅的系统主要受益于该技术的混合信号集成能力,它在太赫兹域提供了一系列新的可能性和应用。本文综述了太赫兹集成电路的研究现状。我们讨论了硅基太赫兹源和接收器的发展趋势,以及迄今为止针对不同应用领域报道的不同太赫兹片上系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Current Status of Terahertz Integrated Circuits - From Components to Systems
Despite its several applications, terahertz (THz) radiation has posed a particular challenge for hardware design. Several expensive and bulky laser or III-V semiconductor based solutions have been employed for THz systems. However, over the last decade, there has been a tremendous research into the design of THz integrated circuits in commercial silicon CMOS and SiGe HBT BiCMOS process technologies. Silicon based systems primarily benefit from the mixed signal integration capabilities of the technology, which enable a new set of possibilities and applications in the THz domain. In this paper, we review the current status of THz integrated circuits. We discuss trends in silicon based THz sources and receivers, as well as different THz on-chip systems that have been reported so far for different application areas.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信