在通往ESD安全GaAs HBT mmic的道路上

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. Pub Date : 1900-01-01 DOI:10.1109/CSICS.2005.1531838

Yintat Ma, G. Li

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引用次数: 3

摘要

为了设计一种抗静电放电(ESD)的微波单片集成电路(mmic)，对器件在静电放电事件下的脆弱性进行了综合评估。结果表明，固有HBT的ESD鲁棒性不仅与器件布局、镇流器电阻和工艺有关，而且与器件布局、镇流器电阻和工艺有关。本文还介绍了用于功率放大器和宽带放大器的低电容负载ESD保护电路，并结合实例进一步提高了mmic的ESD稳健性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the road to ESD safe GaAs HBT MMICs

In order to design a robust electrostatic discharge (ESD) protected microwave monolithic integrated circuits (MMICs) in GaAs HBTs, a comprehensive assessment of device vulnerability to ESD events is presented. The results include not only the intrinsic HBT's ESD robustness performance but also its dependence on device layout, ballast resistor and process. Low capacitance loading ESD protection circuits for power and broadband amplifiers are also introduced to further improve the MMICs' ESD robustness along with examples.

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来源期刊

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.

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