具有离散势垒高度分布的非均匀肖特基二极管电流电压特性的仿真研究

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743300

S. Chand

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引用次数: 0

摘要

考虑热离子发射扩散理论，模拟了具有离散高斯势垒高度分布的非均匀肖特基接触的电流电压特性。将模拟电流电压数据拟合到热离子发射扩散电流方程中，提取二极管参数。讨论了势垒高度的离散高斯分布对势垒高度、理想因子和活化能图等参数的影响。

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Simulation studies of current voltage characteristics of inhomogeneous Schottky diode with discrete distribution of barrier heights

The current voltage characteristics of inhomogeneous Schottky contact with discrete Gaussian distribution of barrier heights are simulated considering thermionic emission diffusion theory. The diode parameters are extracted by fitting of simulated current voltage data into thermionic emission diffusion current equation. The effect of discrete Gaussian distribution of barrier heights on barrier parameters like barrier height, ideality factor and activation energy plots are discussed.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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