Y. Tamura, A. Higo, T. Kiba, C. Thomas, Wang Yunpeng, H. Sodabanlu, I. Yamashita, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa
{"title":"生物模板自顶向下工艺制备的砷化镓纳米片的窄线宽光致发光光谱","authors":"Y. Tamura, A. Higo, T. Kiba, C. Thomas, Wang Yunpeng, H. Sodabanlu, I. Yamashita, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa","doi":"10.1109/NANO.2014.6967977","DOIUrl":null,"url":null,"abstract":"Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"222 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Narrow line-width photoluminescence spectrum of GaAs nanodisks fabricated using bio-template ultimate top-down processes\",\"authors\":\"Y. Tamura, A. Higo, T. Kiba, C. Thomas, Wang Yunpeng, H. Sodabanlu, I. Yamashita, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa\",\"doi\":\"10.1109/NANO.2014.6967977\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.\",\"PeriodicalId\":367660,\"journal\":{\"name\":\"14th IEEE International Conference on Nanotechnology\",\"volume\":\"222 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"14th IEEE International Conference on Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2014.6967977\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th IEEE International Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2014.6967977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Narrow line-width photoluminescence spectrum of GaAs nanodisks fabricated using bio-template ultimate top-down processes
Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.