生物模板自顶向下工艺制备的砷化镓纳米片的窄线宽光致发光光谱

Y. Tamura, A. Higo, T. Kiba, C. Thomas, Wang Yunpeng, H. Sodabanlu, I. Yamashita, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa
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引用次数: 2

摘要

量子点光电器件以其低功耗、温度稳定、高速调制等特点而备受关注。我们利用生物模板和中性光束蚀刻相结合的方法,开发了一种最终无缺陷、自上而下的直径低于20纳米的砷化镓量子纳米盘(NDs)制造工艺。采用金属-有机气相外延技术制备了GaAs/AlGaAs多量子阱堆叠层,用于蚀刻和纳米柱制备(嵌入GaAs NDs)后AlGaAs势垒层的再生。为了制造高均匀性的GaAs NDs阵列,氧化层等表面条件对于用中性束蚀刻GaAs/AlGaAs堆叠层至关重要。为了制备高质量的GaAs nd,少量的氧化物是较好的。为了降低表面氧化比,我们研究了氧自由基处理或真空低温氧退火等氧处理方法来去除铁蛋白壳。因此,我们可以减少表面氧化物的形成,并实现高均匀性和高密度的GaAs NDs阵列。在7 K时观察到极窄的线宽光发射全宽(最大半宽小于30 meV),证实了GaAs NDs的高质量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Narrow line-width photoluminescence spectrum of GaAs nanodisks fabricated using bio-template ultimate top-down processes
Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.
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