系统研究了纳米线晶体管中的RTN，并通过热载流子注入和负偏置温度不稳定性增强了RTN

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers Pub Date : 2014-06-09 DOI:10.1109/VLSIT.2014.6894417

K. Ota, M. Saitoh, C. Tanaka, D. Matsushita, T. Numata

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引用次数: 11

摘要

实验研究了不同宽度(W)、长度(L)和高度(H)的纳米线晶体管(NW Tr.)中的随机电讯噪声(RTN)。RTN的时间分量如捕获时间(τc)和发射时间(τe)与NW尺寸无关，而RTN的阈值电压波动(ΔVth)可以很好地拟合为1/{L(W+2H)}0.5，与传统载流子数波动相对应，而与侧面方向无关。热载流子注入(HCI)和负偏置温度不稳定性(NBTI)诱导了额外的载流子陷阱，导致观察到的RTN数量增加。此外，ΔVth被HCI和NBTI增强，且ΔVth在较窄的W范围内增强更大。

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Systematic study of RTN in nanowire transistor and enhanced RTN by hot carrier injection and negative bias temperature instability

We experimentally study the random telegraph noise (RTN) in nanowire transistor (NW Tr.) with various widths (W), lengths (L), and heights (H). Time components of RTN such as time to capture (τ_c) and emission (τ_e) are independent of NW size, while threshold voltage fluctuation (ΔV_th) by RTN can be well fitted with 1/{L(W+2H)}^0.5 corresponding to the conventional carrier number fluctuations regardless of the side surface orientation. Hot carrier injection (HCI) and negative bias temperature instability (NBTI) induced additional carrier traps leading to the increase in the number of observed RTN. Moreover, ΔV_th is enhanced by HCI and NBTI and enhancement of ΔV_th becomes larger in narrower W.

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来源期刊

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers

CiteScore

3.40

自引率

0.00%

发文量