{"title":"基于双极hfo2的ReRAM的复位转变分析，以提高建模精度","authors":"S. Guitarra, L. Trojman, L. Raymond, M. Gavilánez","doi":"10.1109/LAEDC54796.2022.9908218","DOIUrl":null,"url":null,"abstract":"A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-based ReRAM devices is presented. Five electrical parameters are extracted from experimental and intrinsic curves, and after, they are statistically analyzed and compared among devices of different areas. The results are interpreted by accounting for filamentary resistive switching operation. Finally, we propose a modification to the stochastic model for OxRAM memories presented in [1] to improve the simulation results in the reset region.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy\",\"authors\":\"S. Guitarra, L. Trojman, L. Raymond, M. Gavilánez\",\"doi\":\"10.1109/LAEDC54796.2022.9908218\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-based ReRAM devices is presented. Five electrical parameters are extracted from experimental and intrinsic curves, and after, they are statistically analyzed and compared among devices of different areas. The results are interpreted by accounting for filamentary resistive switching operation. Finally, we propose a modification to the stochastic model for OxRAM memories presented in [1] to improve the simulation results in the reset region.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908218\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of the reset transition in bipolar HfO2-based ReRAM to improve modeling accuracy
A complete analysis of the two-step reset transition observed in the current-voltage curves of HfO2-based ReRAM devices is presented. Five electrical parameters are extracted from experimental and intrinsic curves, and after, they are statistically analyzed and compared among devices of different areas. The results are interpreted by accounting for filamentary resistive switching operation. Finally, we propose a modification to the stochastic model for OxRAM memories presented in [1] to improve the simulation results in the reset region.
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