{"title":"一个EMI抑制MOSFET驱动器","authors":"H.P. Yee","doi":"10.1109/APEC.1997.581460","DOIUrl":null,"url":null,"abstract":"The MOSFFTs dV/sub drain//dt during turn off is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFFT's threshold voltage. This technique controls the dV/sub drain//dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum.","PeriodicalId":423659,"journal":{"name":"Proceedings of APEC 97 - Applied Power Electronics Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"An EMI suppression MOSFET driver\",\"authors\":\"H.P. Yee\",\"doi\":\"10.1109/APEC.1997.581460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The MOSFFTs dV/sub drain//dt during turn off is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFFT's threshold voltage. This technique controls the dV/sub drain//dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum.\",\"PeriodicalId\":423659,\"journal\":{\"name\":\"Proceedings of APEC 97 - Applied Power Electronics Conference\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-02-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of APEC 97 - Applied Power Electronics Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEC.1997.581460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of APEC 97 - Applied Power Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1997.581460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The MOSFFTs dV/sub drain//dt during turn off is sensed by the EMI suppression driver circuit, which selectively adjust the Vgs transition time at a voltage near the MOSFFT's threshold voltage. This technique controls the dV/sub drain//dt and reduces the EMI noise produced by a hard switching power MOSFET while keep its power loss at a minimum.
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