高阶模型去耦电容器在输电网设计中的作用

Li Wern Chew
{"title":"高阶模型去耦电容器在输电网设计中的作用","authors":"Li Wern Chew","doi":"10.1109/ACQED.2012.6320486","DOIUrl":null,"url":null,"abstract":"Decoupling capacitors are widely used in power delivery network (PDN) design to mitigate switching noise from the integrated circuit (IC). Besides, they also provide a low-impedance path to shunt the transient energy to ground at the IC source. Since a real capacitor includes both parasitic inductance and resistance associated with the interconnection and package of the capacitor resulting in an increase in impedance, adequate decoupling capacitances in a PDN design are essential. Often, a capacitor is represented with a higher order model (HOM) of resistance, inductance and capacitance in power delivery simulation. This paper presents the findings from an investigation into the PDN performance using various HOM decoupling capacitors of the same capacitance. The reasons for the different HOM values with the same capacitance include the form factor, manufacturing processes and the operating temperature of the capacitors. From the study, it was found that both the form factor and the differences in the capacitors manufacturing process can cause a significant difference in the impedance profile as well as the voltage droop whereas the operating temperature has a much less impact on the PDN performance.","PeriodicalId":161858,"journal":{"name":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The effect of higher order model decoupling capacitors in the design of a power delivery network\",\"authors\":\"Li Wern Chew\",\"doi\":\"10.1109/ACQED.2012.6320486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Decoupling capacitors are widely used in power delivery network (PDN) design to mitigate switching noise from the integrated circuit (IC). Besides, they also provide a low-impedance path to shunt the transient energy to ground at the IC source. Since a real capacitor includes both parasitic inductance and resistance associated with the interconnection and package of the capacitor resulting in an increase in impedance, adequate decoupling capacitances in a PDN design are essential. Often, a capacitor is represented with a higher order model (HOM) of resistance, inductance and capacitance in power delivery simulation. This paper presents the findings from an investigation into the PDN performance using various HOM decoupling capacitors of the same capacitance. The reasons for the different HOM values with the same capacitance include the form factor, manufacturing processes and the operating temperature of the capacitors. From the study, it was found that both the form factor and the differences in the capacitors manufacturing process can cause a significant difference in the impedance profile as well as the voltage droop whereas the operating temperature has a much less impact on the PDN performance.\",\"PeriodicalId\":161858,\"journal\":{\"name\":\"2012 4th Asia Symposium on Quality Electronic Design (ASQED)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-07-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 4th Asia Symposium on Quality Electronic Design (ASQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ACQED.2012.6320486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 4th Asia Symposium on Quality Electronic Design (ASQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ACQED.2012.6320486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

去耦电容广泛应用于输电网络(PDN)设计中,以减轻集成电路(IC)的开关噪声。此外,它们还提供了一个低阻抗路径,将瞬态能量分流到IC源处的地。由于一个真正的电容包括寄生电感和与电容的互连和封装相关的电阻,导致阻抗增加,因此在PDN设计中足够的去耦电容是必不可少的。在功率传输仿真中,通常用电阻、电感和电容的高阶模型(HOM)来表示电容器。本文介绍了使用相同电容的各种homm去耦电容器对PDN性能进行研究的结果。造成相同电容的HOM值不同的原因包括电容器的外形因素、制造工艺和工作温度。研究发现,电容器的外形因素和制造工艺的差异都会导致阻抗分布和电压下降的显著差异,而工作温度对PDN性能的影响要小得多。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effect of higher order model decoupling capacitors in the design of a power delivery network
Decoupling capacitors are widely used in power delivery network (PDN) design to mitigate switching noise from the integrated circuit (IC). Besides, they also provide a low-impedance path to shunt the transient energy to ground at the IC source. Since a real capacitor includes both parasitic inductance and resistance associated with the interconnection and package of the capacitor resulting in an increase in impedance, adequate decoupling capacitances in a PDN design are essential. Often, a capacitor is represented with a higher order model (HOM) of resistance, inductance and capacitance in power delivery simulation. This paper presents the findings from an investigation into the PDN performance using various HOM decoupling capacitors of the same capacitance. The reasons for the different HOM values with the same capacitance include the form factor, manufacturing processes and the operating temperature of the capacitors. From the study, it was found that both the form factor and the differences in the capacitors manufacturing process can cause a significant difference in the impedance profile as well as the voltage droop whereas the operating temperature has a much less impact on the PDN performance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信