用PLD法生长pbte2薄膜

2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP) Pub Date : 2018-09-01 DOI:10.1109/NAP.2018.8915125

Y. Tur, I. Virt, S. Adamiak, B. Cieniek, I. Lopatynskyi, M. Frugynskyi

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引用次数: 0

摘要

本文报道了在不同温度下用PLD方法在玻璃衬底上沉积n型和p型半导体碲化铅纳米晶薄膜的结构、力学和电学性能。利用x射线衍射(XRD)和扫描电镜(SEM)对膜的结构和形貌进行了表征。

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PbTeThin Films Grown by PLD Method

In this paper, we report on the structural, mechanical and electrical properties of nanocryst alline lead telluride thin films as a n- and p- type semiconductor deposited on glass substrates at different temperature PLD method. The structure and morphology of the films are characterized by means of X-ray diffractions (XRD) patterns, scanning electron microcopy (SEM).

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2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP)

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