铒浓度对ErAs:GaAs光导开关1550 nm时域特性的影响

NAECON 2014 - IEEE National Aerospace and Electronics Conference Pub Date : 2014-06-24 DOI:10.1109/NAECON.2014.7045825

Matthieu Martin, J. Middendorf, E. Brown

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引用次数: 0

摘要

本文介绍了用1550 nm时域谱仪测量的超快ErAs:GaAs光导开关天线的性能。对1%- er和2%-Er ErAs:GaAs PC开关进行了测试，显示检测到的传输频率分别至少为2.5和4.0太赫兹，在~200 GHz以下的动态范围为~50和~55 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1550-nm time-domain study of ErAs:GaAs photoconductive switches as a function of the erbium concentration

We present the performance of ultrafast ErAs:GaAs photoconductive-switch antennas measured with a 1550-nm time-domain spectrometer. A 1%- and 2%-Er ErAs:GaAs PC switch were tested and showed detected transmitted frequencies up to at least 2.5 and 4.0 THz, respectively, with a dynamic range of ~50 and ~55 dB below ~200 GHz.

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NAECON 2014 - IEEE National Aerospace and Electronics Conference

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