高压菱形垂直肖特基整流器

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. Pub Date : 2005-05-23 DOI:10.1109/ISPSD.2005.1488015

W. Huang, T. Chow, J. Yang, J. Butler

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引用次数: 10

摘要

我们设计、模拟和实验证明了高压垂直菱形肖特基整流器。整流器是在具有显著的低p型掺杂的独立的同质外延薄膜上用一种升离工艺制备的。通过理论计算确定了漂移区的厚度和掺杂浓度。具有20um外延层的器件已被证明在290c下20V正向下降时阻挡3.7kV和传导0.6 A/cm2。估计其空穴迁移率或掺杂浓度极低，肖特基势垒高度为0.26eV

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High-Voltage Diamond Vertical Schottky rectifiers

We have designed, simulated and experimentally demonstrated high-voltage vertical diamond Schottky rectifiers. The rectifiers were fabricated on free-standing homo-epi films with remarkably low p-type doping using a lift-off process. Theoretical calculations have been performed to determine the thickness and doping concentration of the drift region. Devices with 20mum epi layer have been shown to block 3.7kV and conduct 0.6 A/cm2 at 20V forward drop at 290degC. A very low hole mobility or doping concentration and a Schottky barrier height of 0.26eV have been estimated

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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