{"title":"mosfet -表面电位模型HiSIM的物理和建模","authors":"M. Miura-Mattausch, H. Mattausch, T. Ezaki","doi":"10.1142/6159","DOIUrl":null,"url":null,"abstract":"Semiconductor Device Physics Basic Compact Surface-Potential Model of the MOSFET Advanced MOSFET Phenomena Modeling Capacitances Noise Models Non-Quasi-Static (NQS) Model Leakage Currents Source/Bulk and Drain/Bulk Diode Models Source/Drain Resistances Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies Summary of Model Equations Exclusion of Modeled Effects and Model Flags.","PeriodicalId":256342,"journal":{"name":"International Series on Advances in Solid State Electronics and Technology","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"93","resultStr":"{\"title\":\"The Physics and Modeling of Mosfets - Surface-Potential Model HiSIM\",\"authors\":\"M. Miura-Mattausch, H. Mattausch, T. Ezaki\",\"doi\":\"10.1142/6159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semiconductor Device Physics Basic Compact Surface-Potential Model of the MOSFET Advanced MOSFET Phenomena Modeling Capacitances Noise Models Non-Quasi-Static (NQS) Model Leakage Currents Source/Bulk and Drain/Bulk Diode Models Source/Drain Resistances Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies Summary of Model Equations Exclusion of Modeled Effects and Model Flags.\",\"PeriodicalId\":256342,\"journal\":{\"name\":\"International Series on Advances in Solid State Electronics and Technology\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"93\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Series on Advances in Solid State Electronics and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/6159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Series on Advances in Solid State Electronics and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/6159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Physics and Modeling of Mosfets - Surface-Potential Model HiSIM
Semiconductor Device Physics Basic Compact Surface-Potential Model of the MOSFET Advanced MOSFET Phenomena Modeling Capacitances Noise Models Non-Quasi-Static (NQS) Model Leakage Currents Source/Bulk and Drain/Bulk Diode Models Source/Drain Resistances Effects of the Source/Drain Diffusion Length for Shallow Trench Isolation (STI) Technologies Summary of Model Equations Exclusion of Modeled Effects and Model Flags.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
