对不同nLDMOS器件ESD稳健性的综合研究及相应改进

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898177

Y. Wang, Guangyi Lu, Lizhong Zhang, Jian Cao, S. Jia, Xing Zhang

{"title":"对不同nLDMOS器件ESD稳健性的综合研究及相应改进","authors":"Y. Wang, Guangyi Lu, Lizhong Zhang, Jian Cao, S. Jia, Xing Zhang","doi":"10.1109/IPFA.2014.6898177","DOIUrl":null,"url":null,"abstract":"Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices\",\"authors\":\"Y. Wang, Guangyi Lu, Lizhong Zhang, Jian Cao, S. Jia, Xing Zhang\",\"doi\":\"10.1109/IPFA.2014.6898177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

采用0.18μm 40V SOI BCD技术，研究了四端和三端非对称n型LDMOS器件。为了提高普通非对称nldmos器件的ESD稳健性，在其源/漏扩散区域下方添加了一个额外的p-sink植入物。传输线脉冲测量结果表明，新型非对称nldmos器件具有合适的触发电压，二次击穿电流提高30-48%。

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Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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