直接晶片键合双端GaAsP/Si双结太阳能电池，效率为19.80%

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON) Pub Date : 2022-11-26 DOI:10.1109/EDKCON56221.2022.10032943

M. Verma, G. S. Sahoo, G. P. Mishra

{"title":"直接晶片键合双端GaAsP/Si双结太阳能电池，效率为19.80%","authors":"M. Verma, G. S. Sahoo, G. P. Mishra","doi":"10.1109/EDKCON56221.2022.10032943","DOIUrl":null,"url":null,"abstract":"The low cost of Si material has enabled the design of III-V/Si based dual junction solar cell. The lattice mismatching between the two sub-cells leads to the Threading Dislocation density and poor current matching. In this work, we have designed direct bonded two terminal GaAsP/Si dual junction solar cell with the help of buffer layers. The current matching is improved in the lattice mis-matched solar cell by using quaternary compound AlGaInP buffer layer. The optimum efficiency of 19.80% is achieved under 1-Sun illumination using AM1.5G global spectrum.","PeriodicalId":296883,"journal":{"name":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Direct wafer-bonded two terminal GaAsP/Si dual junction solar cell with 19.80% efficiency\",\"authors\":\"M. Verma, G. S. Sahoo, G. P. Mishra\",\"doi\":\"10.1109/EDKCON56221.2022.10032943\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The low cost of Si material has enabled the design of III-V/Si based dual junction solar cell. The lattice mismatching between the two sub-cells leads to the Threading Dislocation density and poor current matching. In this work, we have designed direct bonded two terminal GaAsP/Si dual junction solar cell with the help of buffer layers. The current matching is improved in the lattice mis-matched solar cell by using quaternary compound AlGaInP buffer layer. The optimum efficiency of 19.80% is achieved under 1-Sun illumination using AM1.5G global spectrum.\",\"PeriodicalId\":296883,\"journal\":{\"name\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDKCON56221.2022.10032943\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDKCON56221.2022.10032943","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

硅材料的低成本使得基于III-V/Si的双结太阳能电池的设计成为可能。两个子单元之间的晶格不匹配导致了线位错密度和电流匹配不良。在本工作中，我们利用缓冲层设计了直接键合的两端GaAsP/Si双结太阳能电池。采用四元化合物AlGaInP缓冲层改善了晶格错配太阳能电池的电流匹配。采用AM1.5G全局光谱，在1-Sun光照条件下，效率达到19.80%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Direct wafer-bonded two terminal GaAsP/Si dual junction solar cell with 19.80% efficiency

The low cost of Si material has enabled the design of III-V/Si based dual junction solar cell. The lattice mismatching between the two sub-cells leads to the Threading Dislocation density and poor current matching. In this work, we have designed direct bonded two terminal GaAsP/Si dual junction solar cell with the help of buffer layers. The current matching is improved in the lattice mis-matched solar cell by using quaternary compound AlGaInP buffer layer. The optimum efficiency of 19.80% is achieved under 1-Sun illumination using AM1.5G global spectrum.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

自引率

0.00%

发文量