{"title":"一种基于二维光子晶体的全光学与门设计","authors":"A. Macker, A. Shukla, V. P. Dubey","doi":"10.1109/ICETCCT.2017.8280329","DOIUrl":null,"url":null,"abstract":"The paper proposes the design of logical AND gate based on two-dimensional photonic crystals. The proposed structure is having the size of 18μm×18μm in which Si rods are placed in air. Line and point defects are created to achieve the functionality of logical AND gate. A 32-bit simulation is carried out using the finite difference time domain (FDTD) and plane wave expansion (PWE) methods to simulate the proposed structure. A forbidden gap of 0.31276 in the range of 0.735940 ≤ (1/λ) ≤ 1.048702 has been obtained for Transverse Electric (TE) mode at 1550 nm wavelength. A reasonable contrast ratio (CR) of 7.62dB is obtained for the designed structure of AND gate.","PeriodicalId":436902,"journal":{"name":"2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel design of all optical AND gate based on 2-D photonic crystal\",\"authors\":\"A. Macker, A. Shukla, V. P. Dubey\",\"doi\":\"10.1109/ICETCCT.2017.8280329\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper proposes the design of logical AND gate based on two-dimensional photonic crystals. The proposed structure is having the size of 18μm×18μm in which Si rods are placed in air. Line and point defects are created to achieve the functionality of logical AND gate. A 32-bit simulation is carried out using the finite difference time domain (FDTD) and plane wave expansion (PWE) methods to simulate the proposed structure. A forbidden gap of 0.31276 in the range of 0.735940 ≤ (1/λ) ≤ 1.048702 has been obtained for Transverse Electric (TE) mode at 1550 nm wavelength. A reasonable contrast ratio (CR) of 7.62dB is obtained for the designed structure of AND gate.\",\"PeriodicalId\":436902,\"journal\":{\"name\":\"2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)\",\"volume\":\"157 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICETCCT.2017.8280329\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Emerging Trends in Computing and Communication Technologies (ICETCCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICETCCT.2017.8280329","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel design of all optical AND gate based on 2-D photonic crystal
The paper proposes the design of logical AND gate based on two-dimensional photonic crystals. The proposed structure is having the size of 18μm×18μm in which Si rods are placed in air. Line and point defects are created to achieve the functionality of logical AND gate. A 32-bit simulation is carried out using the finite difference time domain (FDTD) and plane wave expansion (PWE) methods to simulate the proposed structure. A forbidden gap of 0.31276 in the range of 0.735940 ≤ (1/λ) ≤ 1.048702 has been obtained for Transverse Electric (TE) mode at 1550 nm wavelength. A reasonable contrast ratio (CR) of 7.62dB is obtained for the designed structure of AND gate.