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金属硅化物在硅上的多层固相反应及外延生长

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785867
Bingzong Li, X. Qu, G. Ru, H. Mo, J. Liu
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引用次数: 0

摘要

研究和讨论了含ti中间层的多种多层材料固相反应生长co -硅化物/Si异质外延及其机理。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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Multilayer solid phase reaction and epitaxial growth of metal silicide on Si
Co-silicide/Si hetero-epitaxial growth by solid phase reaction of various multilayers with a Ti-interlayer and its mechanism are studied and discussed.
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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)
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