SiGe BiCMOS 65 GHz BPSK发射机和30至122 GHz lc变容vco，调谐范围高达21%

IEEE Compound Semiconductor Integrated Circuit Symposium, 2004. Pub Date : 2004-10-24 DOI:10.1109/CSICS.2004.1392529

C. Lee, T. Yao, A. Mangan, K. Yau, M. A. Copeland, S. Voinigescu

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引用次数: 53

摘要

这项工作提出了毫米波，低噪声，宽可调谐差分柯氏压控振荡器的系统研究。开发了一种设计方法，并在30 ghz至122 ghz频率范围内的13种不同的变容调谐(VCO)和固定频率L-C振荡器上进行了实验验证。所有电路都采用累加模式n-MOS变容管和多匝片上电感。35 GHz和60 GHz振荡器在1 mhz偏置时的相位噪声分别为-112.7 dBc和-104 dBc/Hz，并提供+4 dBm的差分输出功率，而推推实现的15 GHz(21%)调谐范围为63.5 GHz至78.5 GHz。一个直接调制，65 ghz二进制相移键控(BPSK)发射机也被实现。

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SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range

This work presents a systematic study of millimetre-wave, low-noise, widely-tuneable differential Colpitts VCOs. A design methodology was developed and validated experimentally over thirteen different varactor-tuned (VCO) and fixed-frequency L-C oscillators spanning the 30-GHz to 122-GHz frequency range. All circuits employ accumulation-mode n-MOS varactors, and multi-turn on-chip inductors. The 35-GHz and 60-GHz oscillators achieve phase noise of -112.7 dBc and -104 dBc/Hz, respectively at 1-MHz offset and deliver +4 dBm differential output power while a push-push implementation demonstrates 15-GHz (21%) tuning range from 63.5 GHz to 78.5 GHz. A directly-modulated, 65-GHz binary phase shift keying (BPSK) transmitter is also implemented.

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来源期刊

IEEE Compound Semiconductor Integrated Circuit Symposium, 2004.

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