GaInAs/InP多量子阱二极管正入射电吸收调制的限制

Quantum Wells for Optics and Optoelectronics Pub Date : 1900-01-01 DOI:10.1364/qwoe.1989.tue12

P. J. Stevens, G. Parry

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引用次数: 1

摘要

我们最近开发了一种优化GaAs/(GaAl)As MQW电吸收调制器设计的技术，并研究了它们的潜在性能[1]。在本文中，我们开发了相同的技术，用于(GaIn)As/InP系统，其工作波长约为1600nm，接近光纤的低损耗窗口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Limits to Normal Incidence Electroabsorption Modulation in GaInAs/InP Multiple Quantum Well Diodes

We have recently developed a technique for optimizing the design of GaAs/(GaAl)As MQW electroabsorption modulators and investigating their potential performance [1]. In this paper, we develop the same technique for the (GaIn)As/InP system whose operating wavelength of around 1600nm is close to that of the low loss window of optical fibres.

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Quantum Wells for Optics and Optoelectronics

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